Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

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	Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
	Liu J
	1998
会议名称	2nd international conference on low dimensional structures and devices
会议日期	may 19-21, 1997
会议地点	lisbon, portugal
关键词	GaAs/AlAs superlattices transport tunnelling Landau level NEGATIVE DIFFERENTIAL CONDUCTIVITY LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS
页码	349-354
通讯作者	liu j vienna tech univ inst festkorperelekt floragasse 7-1 a-1040 vienna austria. 电子邮箱地址: j.liu.20@bham.ac.uk
中文摘要	electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved.
英文摘要	electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:35导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:35z (gmt). no. of bitstreams: 1 3052.pdf: 273807 bytes, checksum: 15a74ec625893d3857e9a8b57128acae (md5) previous issue date: 1998; vienna tech univ, inst festkorperelekt, a-1040 vienna, austria; natl univ singapore, dept elect engn, ctr optoelect, singapore 119260, singapore; acad sinica, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	microelectronic engineering, 43-4
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	0167-9317
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15065]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu J. Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices[C]. 见:2nd international conference on low dimensional structures and devices. lisbon, portugal. may 19-21, 1997.