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	Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers
	Zhuang QD ; Li JM ; Zeng YP ; Pan L ; Chen YH ; Kong MY ; Lin LY
	1999
会议名称	40th electronic materials conference (emc-40)
会议日期	jun 24-26, 1998
会议地点	charlottesville, virginia
关键词	InGaAs GaAs quantum dots infrared absorption self-organization X-RAY-DIFFRACTION ISLANDS TRANSITIONS
页码	503-505
通讯作者	zhuang qd chinese acad sci inst semicond novel mat ctr pob 912 beijing 100083 peoples r china.
中文摘要	self-organized ingaas/gaas quantum dots (qds) stacked multilayers have been prepared by solid source molecular beam epitaxy. cross-sectional transmission electron microscopy shows that the ingaas qds are nearly perfectly vertically aligned in the growth direction [100]. the filtering effect on the qds distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. this indicates the potential of qds multilayer structure for use as infrared photodetector.
英文摘要	self-organized ingaas/gaas quantum dots (qds) stacked multilayers have been prepared by solid source molecular beam epitaxy. cross-sectional transmission electron microscopy shows that the ingaas qds are nearly perfectly vertically aligned in the growth direction [100]. the filtering effect on the qds distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. this indicates the potential of qds multilayer structure for use as infrared photodetector.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:31导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:32z (gmt). no. of bitstreams: 1 3012.pdf: 182192 bytes, checksum: d4df73f00b1cdd0dce6888568b3907c7 (md5) previous issue date: 1999; tms.; chinese acad sci, inst semicond, novel mat ctr, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	tms.
会议录	journal of electronic materials, 28 (5)
会议录出版者	minerals metals materials soc ; 420 commonwealth dr, warrendale, pa 15086 usa
会议录出版地	420 commonwealth dr, warrendale, pa 15086 usa
学科主题	半导体材料
语种	英语
ISSN号	0361-5235
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15041]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Zeng YP,et al. Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers[C]. 见:40th electronic materials conference (emc-40). charlottesville, virginia. jun 24-26, 1998.

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