High-quality GaN grown by gas-source MBE

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-quality GaN grown by gas-source MBE
	Wang JX ; Sun DZ ; Wang XL ; Li JM ; Zeng YP ; Hou X ; Lin LY
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	characterization molecular beam epitaxy gallium compounds nitrides piezoelectric materials semiconducting gallium compounds MOLECULAR-BEAM EPITAXY HETEROSTRUCTURES SAPPHIRE DIODES
页码	386-389
通讯作者	wang jx chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	high-quality gan epilayers were consistently obtained using a home-made gas-sourer mbe system on sapphire substrates. room-temperature electron mobility of the grown gan film is 300 cm(2)/v s with a background electron concentration as low as 2 x 10(17) cm(-3) the full-width at half-maximum of the gan (0 0 0 2) double-crystal x-ray rocking curve is 6 arcmin. at low temperature (3.5 k), the fwhm of the: near-band-edge photoluminescence emission line is 10 mev. furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a gan/aln/gan/sapphire structure. its room-temperature and low-temperature (77 k) electron mobility is 680 cm(2)/v s and 1700 cm(2)/v s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (c) 2001 published by elsevier science.
英文摘要	high-quality gan epilayers were consistently obtained using a home-made gas-sourer mbe system on sapphire substrates. room-temperature electron mobility of the grown gan film is 300 cm(2)/v s with a background electron concentration as low as 2 x 10(17) cm(-3) the full-width at half-maximum of the gan (0 0 0 2) double-crystal x-ray rocking curve is 6 arcmin. at low temperature (3.5 k), the fwhm of the: near-band-edge photoluminescence emission line is 10 mev. furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a gan/aln/gan/sapphire structure. its room-temperature and low-temperature (77 k) electron mobility is 680 cm(2)/v s and 1700 cm(2)/v s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (c) 2001 published by elsevier science.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:18导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:18z (gmt). no. of bitstreams: 1 2914.pdf: 106008 bytes, checksum: 53e1bc616050e141d55898d6a203f656 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, xian inst opt & precis mech, xian 710068, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14937]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang JX,Sun DZ,Wang XL,et al. High-quality GaN grown by gas-source MBE[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.