Design and fabrication of GaAs OMIST photodetector

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Design and fabrication of GaAs OMIST photodetector
	Kang XJ ; Lin SM ; Liao QW ; Gao JH ; Liu SA ; Cheng P ; Wang HJ ; Zhang CH ; Wang QM
	1998
会议名称	conference on integrated optoelectronics ii
会议日期	sep 18-19, 1998
会议地点	beijing, peoples r china
关键词	photodetector oxidation materials growth
页码	23-25
通讯作者	kang xj acad sinica inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要	we designed and fabricated gaas omist (optical-controlled metal-insulator-semiconductor thyristor) device. using oxidation of a1as layer that is grown by mbe form the ultra-thin semi-insulating layer (uti) of the gaas omist. the accurate control and formation of high quality semi-insulating layer (alxoy) are the key processes for fabricating gaas omist. the device exhibits a current-controlled negative resistance region in its i-v characteristics. when illuminated, the major effect of optical excitation is the reduction of the switching voltage. if the gaas omist device is biased at a voltage below its dark switching voltage v-s, sufficient incident light can switch omist from high impedance low current"off"state to low impedance high current "on"state. the absorbing material of omist is gaas, so if the wavelength of incident light within 600 similar to 850nm can be detected effectively. it is suitable to be used as photodetector for digital optical data process. the other attractive features of gaas omist device include suitable conducted current, switching voltage and power levels for oeic, high switch speed and high sensitivity to light or current injection.
英文摘要	we designed and fabricated gaas omist (optical-controlled metal-insulator-semiconductor thyristor) device. using oxidation of a1as layer that is grown by mbe form the ultra-thin semi-insulating layer (uti) of the gaas omist. the accurate control and formation of high quality semi-insulating layer (alxoy) are the key processes for fabricating gaas omist. the device exhibits a current-controlled negative resistance region in its i-v characteristics. when illuminated, the major effect of optical excitation is the reduction of the switching voltage. if the gaas omist device is biased at a voltage below its dark switching voltage v-s, sufficient incident light can switch omist from high impedance low current"off"state to low impedance high current "on"state. the absorbing material of omist is gaas, so if the wavelength of incident light within 600 similar to 850nm can be detected effectively. it is suitable to be used as photodetector for digital optical data process. the other attractive features of gaas omist device include suitable conducted current, switching voltage and power levels for oeic, high switch speed and high sensitivity to light or current injection.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:18z (gmt). no. of bitstreams: 1 3033.pdf: 142081 bytes, checksum: 2b0446467baed3fedb15a5125ac266c2 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; acad sinica, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie int soc opt engn.; cos chinese opt soc.; coema.
会议录	integrated optoelectronics ii, 3551
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3012-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13861]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang XJ,Lin SM,Liao QW,et al. Design and fabrication of GaAs OMIST photodetector[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998.