A one-way MOS analog switch
Wu G ; Shi Y
1998
会议名称5th international conference on solid-state and integrated circuit technology
会议日期oct 21-23, 1998
会议地点beijing, peoples r china
页码413-415
通讯作者wu g chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要in this paper, a one-way nmos analog switch featuring a low plug-in consumption is presented. the performances of analog switch, especially the performances of source follower are simulated under different conditions with pspice. simulation results and factors affecting the deviation between input and output are analyzed, some advice on how to reduce the deviation between input and output is given. ar the end of the paper, voltage relationship between input and output of the analog switch is obtained. function of first degree, vout = kvin + v0, is used to approximate the voltage relationship. the simulation results anti the value achieved from the approximation equation are given as well.
英文摘要in this paper, a one-way nmos analog switch featuring a low plug-in consumption is presented. the performances of analog switch, especially the performances of source follower are simulated under different conditions with pspice. simulation results and factors affecting the deviation between input and output are analyzed, some advice on how to reduce the deviation between input and output is given. ar the end of the paper, voltage relationship between input and output of the analog switch is obtained. function of first degree, vout = kvin + v0, is used to approximate the voltage relationship. the simulation results anti the value achieved from the approximation equation are given as well.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:10z (gmt). no. of bitstreams: 1 2992.pdf: 173276 bytes, checksum: a390c0133f2fd46d912d786514c045f3 (md5) previous issue date: 1998; chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.
会议录1998 5th international conference on solid-state and integrated circuit technology proceedings
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地345 e 47th st, new york, ny 10017 usa
学科主题半导体材料
语种英语
ISBN号0-7803-4306-9
内容类型会议论文
源URL[http://ir.semi.ac.cn/handle/172111/13829]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wu G,Shi Y. A one-way MOS analog switch[C]. 见:5th international conference on solid-state and integrated circuit technology. beijing, peoples r china. oct 21-23, 1998.
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