Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Strained MQW electro-absorption modulators with high extinction ratio and low capacitance
	Sun Y ; Wang W ; Chen WX ; Liu GL ; Zhou F ; Zhu HL
	2001
会议名称	13th international conference on indium phosphide and related materials (iprm)
会议日期	may 14-18, 2001
会议地点	nara, japan
关键词	ELECTROABSORPTION
页码	155-157
通讯作者	sun y chinese acad sci inst semicond natl res ctr optoelect technol pob 912 beijing 100083 peoples r china.
中文摘要	we fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained ingaas/inalas mqw show it's polarization independent, high extinction ratio (> 40db) and low capacitance (c <0.6pf) which can achieve an ultra-high frequency(> 10ghz). the device is be used in 10gbps optical time division multiplex (otdm) system as a signal generator.
英文摘要	we fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained ingaas/inalas mqw show it's polarization independent, high extinction ratio (> 40db) and low capacitance (c <0.6pf) which can achieve an ultra-high frequency(> 10ghz). the device is be used in 10gbps optical time division multiplex (otdm) system as a signal generator.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:54z (gmt). no. of bitstreams: 1 2896.pdf: 278684 bytes, checksum: fbcfba408559e785d54ebb964b1481d5 (md5) previous issue date: 2001; japan soc appl phys.; ieee lasers & electro opt soc.; ieee electron devices soc.; inst electr, informat & commun engineers.; optoelectr ind & technol dec assoc.; res & dev assoc future electron devices.; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys.; ieee lasers & electro opt soc.; ieee electron devices soc.; inst electr, informat & commun engineers.; optoelectr ind & technol dec assoc.; res & dev assoc future electron devices.
会议录	2001 international conference on indium phosphide and related materials, conference proceedings
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISSN号	1092-8669
ISBN号	0-7803-6700-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13735]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun Y,Wang W,Chen WX,et al. Strained MQW electro-absorption modulators with high extinction ratio and low capacitance[C]. 见:13th international conference on indium phosphide and related materials (iprm). nara, japan. may 14-18, 2001.