1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
	Zhang W ; Pan Z ; Li LH ; Zhang RK ; Lin YW ; Wu RG
	2001
会议名称	asia-pacific optical and wireless communications conference (apoc 2001)
会议日期	nov 12-15, 2001
会议地点	beijing, peoples r china
关键词	GaInNAs photodetector resonant cavity enhanced high speed property MOLECULAR-BEAM EPITAXY SCHOTTKY PHOTODIODES PERFORMANCE EFFICIENCY OPERATION BANDWIDTH DESIGN SI
页码	225-231
通讯作者	zhang w chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	a gainnas/gaas multiple quantum well (mqw) resonant-cavity enhanced (rce) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. the gainnas rce photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. gainnas/gaas mqw shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. for a 100-mum diameter rce photodetector, the dark current is 20 and 32 pa at biases of 0 and 6 v, respectively, and the breakdown voltage is -18 v. the measured 3-db bandwidth is 308 mhz. the reasons resulting in the poor high speed property were analyzed. the tunable wavelength of 18 nm with the angle of incident light was observed.
英文摘要	a gainnas/gaas multiple quantum well (mqw) resonant-cavity enhanced (rce) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. the gainnas rce photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. gainnas/gaas mqw shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. for a 100-mum diameter rce photodetector, the dark current is 20 and 32 pa at biases of 0 and 6 v, respectively, and the breakdown voltage is -18 v. the measured 3-db bandwidth is 308 mhz. the reasons resulting in the poor high speed property were analyzed. the tunable wavelength of 18 nm with the angle of incident light was observed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:37z (gmt). no. of bitstreams: 0 previous issue date: 2001; spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china; beijing univ posts & telecommun, beijing 100876, peoples r china
收录类别	CPCI-S
会议主办者	spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.
会议录	apoc 2001: asia-pacific optical and wireless communications: optoelectronics, materials, and devices for communications, 4580
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-4310-7
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13665]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang W,Pan Z,Li LH,et al. 1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors[C]. 见:asia-pacific optical and wireless communications conference (apoc 2001). beijing, peoples r china. nov 12-15, 2001.