Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
	Leung BH ; Fong WK ; Surya C ; Lu LW ; Ge WK
	2003
会议名称	1st international symposium on point defect and stoichiometry
会议日期	mar 20-22, 2003
会议地点	sendai, japan
关键词	GaN low-frequency noise deep levels deep level transient Fourier spectroscopy DEVICES
页码	523-525
通讯作者	surya c hong kong polytech univ photon res ctr dept elect & informat engn hong kong hong kong peoples r china. 电子邮箱地址: ensurya@polyu.edu.hk
中文摘要	metal-semiconductor-metal (msm) structures were fabricated by rf-plasma-assisted mbe using different buffer layer structures. one type of buffer structure consists of an aln high-temperature buffer layer (htbl) and a gan intermediate temperature buffer layer (itbl), another buffer structure consists of just a single a in htbl. systematic measurements in the flicker noise and deep level transient fourier spectroscopy (dltfs) measurements were used to characterize the defect properties in the films. both the noise and dltfs measurements indicate improved properties for devices fabricated with the use of itbl and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (c) 2003 elsevier ltd. all rights reserved.
英文摘要	metal-semiconductor-metal (msm) structures were fabricated by rf-plasma-assisted mbe using different buffer layer structures. one type of buffer structure consists of an aln high-temperature buffer layer (htbl) and a gan intermediate temperature buffer layer (itbl), another buffer structure consists of just a single a in htbl. systematic measurements in the flicker noise and deep level transient fourier spectroscopy (dltfs) measurements were used to characterize the defect properties in the films. both the noise and dltfs measurements indicate improved properties for devices fabricated with the use of itbl and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (c) 2003 elsevier ltd. all rights reserved.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:24z (gmt). no. of bitstreams: 1 2789.pdf: 195768 bytes, checksum: a9eaecdd911efbd2df390973f1c376a0 (md5) previous issue date: 2003; hong kong polytech univ, photon res ctr, dept elect & informat engn, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china
收录类别	CPCI-S
会议录	materials science in semiconductor processing, 6 (5-6)
会议录出版者	elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
会议录出版地	the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
学科主题	半导体物理
语种	英语
ISSN号	1369-8001
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13601]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Leung BH,Fong WK,Surya C,et al. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers[C]. 见:1st international symposium on point defect and stoichiometry. sendai, japan. mar 20-22, 2003.