Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米生物医学与安全研究部 > 程国胜团队

	Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors
	Kong T(孔涛); Cheng GS(程国胜)
刊名	ADVANCED FUNCTIONAL MATERIALS
	2014-06
卷号	24 期号:23 页码:3581-3586
关键词	nanowires photodetectors surface Se vacancies
通讯作者	黄荣
英文摘要	High-quality single-crystalline ternary (Sb1-xBix)(2)Se-3 nanowires (NWs) (x = 0-0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb1-xBix)(2)Se-3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb0.44Bi0.56)(2)Se-3 NW photodetector reach as high as approximate to 8261.4 A/W and approximate to 1.6 x 10(6) %, respectively. Those excellent performances unambiguously demonstrate that Sb-Bi-Se NWs are promising for the utilizations of high-sensitivity and high-speed photodetectors and photoelectronic switches.
收录类别	SCI
语种	英语
WOS记录号	WOS:000337484300013
公开日期	2014-12-08
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1663]
专题	苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队
推荐引用方式 GB/T 7714	Kong T,Cheng GS. Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(23):3581-3586.
APA	Kong T,&Cheng GS.(2014).Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors.ADVANCED FUNCTIONAL MATERIALS,24(23),3581-3586.
MLA	Kong T,et al."Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors".ADVANCED FUNCTIONAL MATERIALS 24.23(2014):3581-3586.