Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

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	Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask
	Cai, Y (蔡勇)
刊名	IEEE ELECTRON DEVICE LETTERS
	2014
卷号	35 期号:12 页码:1197-1199
关键词	Self-terminating normally-off AlGaN/GaN MOSFET GaN cap layer gate recess recess mask
通讯作者	Xu, Z (Xu, Zhe)
英文摘要	Based on our proposed self-terminating gate recess etching technique, normally-off recess-gated AlGaN/GaN MOSFET has been demonstrated with a novel method using GaN cap layer (CL) as recess mask, which, as a result, simplifies the device fabrication process and lowers the fabrication cost. The GaN CL is capable of acting as an effective recess mask for the gate recess process, which includes a thermal oxidation for 45 min at 650 degrees C followed by 4-min etching in potassium hydroxide (KOH) at 70 degrees C. After gate recess process, no obvious change is observed in terms of the surface morphology of the GaN CL, the contact resistance of the Ohmic contact formed directly on the GaN CL as well as the sheet resistance of the two-dimensional electron gas (2-DEG) channel layer under the GaN CL. The fabricated device exhibits a threshold voltage (V-th) as high as 5 V, a maximum drain current (I-dmax) of similar to 200 mA/mm, a high ON/OFF current ratio of similar to 10(10) together with a low forward gate leakage current of similar to 10(-5) mA/mm. Meanwhile, the OFF-state breakdown voltage (V-br) of the device with gate-drain distance of 6 mu m is 450 V.
收录类别	SCI
语种	英语
WOS记录号	WOS:000345575400012
公开日期	2015-02-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1833]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队
推荐引用方式 GB/T 7714	Cai, Y . Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(12):1197-1199.
APA	Cai, Y .(2014).Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask.IEEE ELECTRON DEVICE LETTERS,35(12),1197-1199.
MLA	Cai, Y ."Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask".IEEE ELECTRON DEVICE LETTERS 35.12(2014):1197-1199.