Band hybridization effect in InAs/GaSb based quantum wells

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘立伟团队

	Band hybridization effect in InAs/GaSb based quantum wells
	Liu, LW(刘立伟)
刊名	PHYSICS LETTERS A
	2013-03-15
卷号	377 期号:9 页码:727-730
关键词	Type II quantum well Band hybridization Many-body effect Exchange self-energy Minigap
通讯作者	Yang, CH
英文摘要	We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system.
收录类别	SCI
语种	英语
WOS记录号	WOS:000315314300013
公开日期	2014-01-08
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1259]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘立伟团队
推荐引用方式 GB/T 7714	Liu, LW. Band hybridization effect in InAs/GaSb based quantum wells[J]. PHYSICS LETTERS A,2013,377(9):727-730.
APA	Liu, LW.(2013).Band hybridization effect in InAs/GaSb based quantum wells.PHYSICS LETTERS A,377(9),727-730.
MLA	Liu, LW."Band hybridization effect in InAs/GaSb based quantum wells".PHYSICS LETTERS A 377.9(2013):727-730.