Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

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	Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions
	Zhang, F(张峰); Ikeda, M; Zhou, K(周堃); Liu, ZS; Liu, JP(刘建平); Zhang, SM(张书明); Yang, H(杨辉)
刊名	JOURNAL OF APPLIED PHYSICS
	2015
卷号	118 期号:3 页码:9
通讯作者	Ikeda, M
英文摘要	Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells. (C) 2015 AIP Publishing LLC.
收录类别	SCI
语种	英语
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3338]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Zhang, F,Ikeda, M,Zhou, K,et al. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions[J]. JOURNAL OF APPLIED PHYSICS,2015,118(3):9.
APA	Zhang, F.,Ikeda, M.,Zhou, K.,Liu, ZS.,Liu, JP.,...&Yang, H.(2015).Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions.JOURNAL OF APPLIED PHYSICS,118(3),9.
MLA	Zhang, F,et al."Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions".JOURNAL OF APPLIED PHYSICS 118.3(2015):9.