The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.