Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
	Yang H(杨辉); Zhang LQ; Ji L; Zhang LQ; Zhang SM
刊名	CHINESE PHYSICS LETTERS
	2008-04
卷号	25 期号:4 页码:1281-1283
通讯作者	Zhang LQ
合作状况	其它
英文摘要	Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.
收录类别	SCI
语种	英语
WOS记录号	WOS:000255153000032
公开日期	2010-01-15
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/156]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
通讯作者	Zhang LQ; Zhang LQ
推荐引用方式 GB/T 7714	Yang H,Zhang LQ,Ji L,et al. Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature[J]. CHINESE PHYSICS LETTERS,2008,25(4):1281-1283.
APA	Yang H,Zhang LQ,Ji L,Zhang LQ,&Zhang SM.(2008).Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature.CHINESE PHYSICS LETTERS,25(4),1281-1283.
MLA	Yang H,et al."Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature".CHINESE PHYSICS LETTERS 25.4(2008):1281-1283.