Fabrication and optical characterization of GaN-based nanopillar light emitting diodes

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Fabrication and optical characterization of GaN-based nanopillar light emitting diodes
	Zhang SM; Yang H(杨辉); Zhang SM
刊名	CHINESE PHYSICS LETTERS
	2008-09
卷号	25 期号:9 页码:3485-3488
通讯作者	Zhang SM
合作状况	其它
英文摘要	InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H(2)O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
收录类别	SCI
语种	英语
WOS记录号	WOS:000258916400105
公开日期	2010-01-15
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/152]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
通讯作者	Zhang SM; Zhang SM
推荐引用方式 GB/T 7714	Zhang SM,Yang H,Zhang SM. Fabrication and optical characterization of GaN-based nanopillar light emitting diodes[J]. CHINESE PHYSICS LETTERS,2008,25(9):3485-3488.
APA	Zhang SM,Yang H,&Zhang SM.(2008).Fabrication and optical characterization of GaN-based nanopillar light emitting diodes.CHINESE PHYSICS LETTERS,25(9),3485-3488.
MLA	Zhang SM,et al."Fabrication and optical characterization of GaN-based nanopillar light emitting diodes".CHINESE PHYSICS LETTERS 25.9(2008):3485-3488.