GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

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	GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE
	Zheng, XH(郑新河); Liu, SJ; Xia, Y; Gan, XY; Wang, HX; Wang, NM; Yang, H(杨辉)
刊名	CHINESE PHYSICS B
	2015
卷号	24 期号:10 页码:7
关键词	Te doping Mg doping GaAs tunnel junction GaInP/GaAs tandem solar cell molecular beam epitaxy
通讯作者	Zheng, XH
英文摘要	We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm(2). The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 mA/cm(2), but a low open-circuit voltage range of 1.4 V similar to 1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy (SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended GaAs n(++)/p(++) junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of similar to 2.5 x 10(20) in GaAs could cause a lattice strain of 10(-3) in magnitude and thus a surface roughening, which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3299]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Zheng, XH,Liu, SJ,Xia, Y,et al. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE[J]. CHINESE PHYSICS B,2015,24(10):7.
APA	Zheng, XH.,Liu, SJ.,Xia, Y.,Gan, XY.,Wang, HX.,...&Yang, H.(2015).GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE.CHINESE PHYSICS B,24(10),7.
MLA	Zheng, XH,et al."GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE".CHINESE PHYSICS B 24.10(2015):7.