The investigation of GaInP solar cell grown by all-solid MBE

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	The investigation of GaInP solar cell grown by all-solid MBE
	Lu, SL(陆书龙); Ji, L
刊名	JOURNAL OF CRYSTAL GROWTH
	2013-09
卷号	378 期号:0 页码:604-606
关键词	Molecular beam epitaxy Semiconducting III-V materials Solar cells
通讯作者	Lu, SL(陆书龙)
英文摘要	We report on the study of GaInP solar cell grown by solid-state molecular beam epitaxy (MBE) on GaAs. The effect of growth temperature on the device performance is investigated. Under the standard one-sun air-mass 1.5 global (AM1.5G) illumination, an efficiency of 16.6% has been obtained for GaInP single-junction solar cell grown at a high temperature. A worse device performance is observed with decreasing growth temperature. Temperature-dependent and time-resolved photoluminescence results demonstrate that the GaInP optical quality is greatly improved in the case of a high growth temperature. A long PL decay time of GaInP/AlInP structure indicates that AlInP is more promising as the back surface field for the future solar cell performance improvement. (c) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000323355900148
公开日期	2014-01-15
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1374]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
通讯作者	Lu, SL(陆书龙)
推荐引用方式 GB/T 7714	Lu, SL,Ji, L. The investigation of GaInP solar cell grown by all-solid MBE[J]. JOURNAL OF CRYSTAL GROWTH,2013,378(0):604-606.
APA	Lu, SL,&Ji, L.(2013).The investigation of GaInP solar cell grown by all-solid MBE.JOURNAL OF CRYSTAL GROWTH,378(0),604-606.
MLA	Lu, SL,et al."The investigation of GaInP solar cell grown by all-solid MBE".JOURNAL OF CRYSTAL GROWTH 378.0(2013):604-606.