Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells | |
Lu SL(陆书龙); Lu SL(陆书龙); Dong JR(董建荣); Bian LF(边历峰) | |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS |
2009-10 | |
卷号 | 48期号:10 |
通讯作者 | Lu SL(陆书龙) |
合作状况 | 其它 |
英文摘要 | We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by time-resolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10 mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000271527100006 |
公开日期 | 2010-01-15 |
内容类型 | 期刊论文 |
源URL | [http://58.210.77.100/handle/332007/144] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
通讯作者 | Lu SL(陆书龙); Lu SL(陆书龙) |
推荐引用方式 GB/T 7714 | Lu SL,Lu SL,Dong JR,et al. Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(10). |
APA | Lu SL,Lu SL,Dong JR,&Bian LF.(2009).Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells.JAPANESE JOURNAL OF APPLIED PHYSICS,48(10). |
MLA | Lu SL,et al."Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells".JAPANESE JOURNAL OF APPLIED PHYSICS 48.10(2009). |
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