Vacancy-induced room-temperature ferromagnetism in Ga-TiO2

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	Vacancy-induced room-temperature ferromagnetism in Ga-TiO2
	Bao, NN; Yi, JB; Fan, HM; Qin, XB; Zhang, P; Wang, BY; Ding, J; Li, S;秦秀波; 张鹏(正); Wang BY(王宝义)
刊名	SCRIPTA MATERIALIA
	2012
卷号	66 期号:10 页码:821-824
关键词	Diluted magnetic semiconductor TiO2 Room-temperature ferromagnetism Vacancy
英文摘要	Ga-TiO2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
学科主题	Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering
收录类别	SCI
WOS记录号	WOS:000302756400026
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224068]
专题	高能物理研究所_核技术应用研究中心
推荐引用方式 GB/T 7714	Bao, NN,Yi, JB,Fan, HM,et al. Vacancy-induced room-temperature ferromagnetism in Ga-TiO2[J]. SCRIPTA MATERIALIA,2012,66(10):821-824.
APA	Bao, NN.,Yi, JB.,Fan, HM.,Qin, XB.,Zhang, P.,...&王宝义.(2012).Vacancy-induced room-temperature ferromagnetism in Ga-TiO2.SCRIPTA MATERIALIA,66(10),821-824.
MLA	Bao, NN,et al."Vacancy-induced room-temperature ferromagnetism in Ga-TiO2".SCRIPTA MATERIALIA 66.10(2012):821-824.