Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

	Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition
	Xing HY(邢海英); Xing, HY; 崔明启;Xu, ZC; Cui, MQ; Xie, YX; Zhang, GY
刊名	CHINESE PHYSICS B
	2014
卷号	23 期号:10 页码:107803
关键词	GaMnN photoluminescence magnetism metal-organic chemical vapor deposition
英文摘要	Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn](A) = 0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t(2) state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000344057600088
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224903]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Xing HY,Xing, HY,崔明启；Xu, ZC,et al. Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition[J]. CHINESE PHYSICS B,2014,23(10):107803.
APA	邢海英,Xing, HY,崔明启；Xu, ZC,Cui, MQ,Xie, YX,&Zhang, GY.(2014).Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition.CHINESE PHYSICS B,23(10),107803.
MLA	邢海英,et al."Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition".CHINESE PHYSICS B 23.10(2014):107803.