X-ray probe of GaN thin films grown on InGaN compliant substrates

	X-ray probe of GaN thin films grown on InGaN compliant substrates
	Xu, XQ; Li, Y; Liu, JM; Wei, HY; Liu, XL; Yang, SY; Wang, ZG; Wang, HH;王焕华
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	102 期号:13 页码:132104
英文摘要	GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799279]
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000317240200038
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224648]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Xu, XQ,Li, Y,Liu, JM,et al. X-ray probe of GaN thin films grown on InGaN compliant substrates[J]. APPLIED PHYSICS LETTERS,2013,102(13):132104.
APA	Xu, XQ.,Li, Y.,Liu, JM.,Wei, HY.,Liu, XL.,...&Wang, HH；王焕华.(2013).X-ray probe of GaN thin films grown on InGaN compliant substrates.APPLIED PHYSICS LETTERS,102(13),132104.
MLA	Xu, XQ,et al."X-ray probe of GaN thin films grown on InGaN compliant substrates".APPLIED PHYSICS LETTERS 102.13(2013):132104.