Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface

	Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
	Sun, B; Zhao, LX; Wei, TB; Yi, XY; Liu, ZQ; Wang, GH; Li, JM; Yi, FT;伊福廷
刊名	OPTICS EXPRESS
	2012
卷号	20 期号:17 页码:18537-18544
英文摘要	InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones. (C) 2012 Optical Society of America
学科主题	Optics
收录类别	SCI
WOS记录号	WOS:000307873600002
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224359]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Sun, B,Zhao, LX,Wei, TB,et al. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface[J]. OPTICS EXPRESS,2012,20(17):18537-18544.
APA	Sun, B.,Zhao, LX.,Wei, TB.,Yi, XY.,Liu, ZQ.,...&Yi, FT；伊福廷.(2012).Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.OPTICS EXPRESS,20(17),18537-18544.
MLA	Sun, B,et al."Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface".OPTICS EXPRESS 20.17(2012):18537-18544.