Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy

	Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy
	Linen Zhang ; Chao Liu ; Qiumin Yang ; Lijie Cui ; Yiping Zeng
刊名	materials science in semiconductor processing
	2015
卷号	29 页码:351-356
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26850]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Linen Zhang,Chao Liu,Qiumin Yang,et al. Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy[J]. materials science in semiconductor processing,2015,29:351-356.
APA	Linen Zhang,Chao Liu,Qiumin Yang,Lijie Cui,&Yiping Zeng.(2015).Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy.materials science in semiconductor processing,29,351-356.
MLA	Linen Zhang,et al."Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy".materials science in semiconductor processing 29(2015):351-356.