Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

	Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells
	J.L. Yu ; S.Y. Cheng ; Y.F. Lai ; Q. Zheng ; Y.H. Chen ; C.G. Tang
刊名	journal of applied physics
	2015
卷号	117 页码:015302
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26776]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	J.L. Yu,S.Y. Cheng,Y.F. Lai,et al. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells[J]. journal of applied physics,2015,117:015302.
APA	J.L. Yu,S.Y. Cheng,Y.F. Lai,Q. Zheng,Y.H. Chen,&C.G. Tang.(2015).Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells.journal of applied physics,117,015302.
MLA	J.L. Yu,et al."Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells".journal of applied physics 117(2015):015302.