Intrinsic defects in gallium sulfide monolayer: a first-principles study

	Intrinsic defects in gallium sulfide monolayer: a first-principles study
	Hui Chen ; Yan Li ; Le Huang ; Jingbo Li
刊名	rsc advances
	2015
卷号	5 期号:63 页码:50883-50889
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26891]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Hui Chen,Yan Li,Le Huang,et al. Intrinsic defects in gallium sulfide monolayer: a first-principles study[J]. rsc advances,2015,5(63):50883-50889.
APA	Hui Chen,Yan Li,Le Huang,&Jingbo Li.(2015).Intrinsic defects in gallium sulfide monolayer: a first-principles study.rsc advances,5(63),50883-50889.
MLA	Hui Chen,et al."Intrinsic defects in gallium sulfide monolayer: a first-principles study".rsc advances 5.63(2015):50883-50889.