High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
	Fang Gaozhan ; Xiao Jianwei ; Ma Xiaoyu ; Xu Zuntu ; Zhang Jinming ; Tan Manqing ; Liu Zongshun ; Liu Suping ; Feng Xiaoming
刊名	chinese journal of lasers
	2002
卷号	11 期号:1 页码:9-13
中文摘要	the 940 nm al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. the stuctures were grown by metal organic chemical vapour deposition. the devices show excellent performances. the maximum output power of 6.7 w in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in al-free active region laser diodes with a narrow waveguide. the 19 % fill-factor laser diode bars emit 33 w, and they can operate at 15w with low degradation rates.
学科主题	光电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17603]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fang Gaozhan,Xiao Jianwei,Ma Xiaoyu,et al. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. chinese journal of lasers,2002,11(1):9-13.
APA	Fang Gaozhan.,Xiao Jianwei.,Ma Xiaoyu.,Xu Zuntu.,Zhang Jinming.,...&Feng Xiaoming.(2002).High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide.chinese journal of lasers,11(1),9-13.
MLA	Fang Gaozhan,et al."High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide".chinese journal of lasers 11.1(2002):9-13.