Second-Order Raman Scattering from n- and p-Type 4H-SiC

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	Second-Order Raman Scattering from n- and p-Type 4H-SiC
	Gao Xin ; Sun Guosheng ; Li Jinmin ; Wang Lei ; Zhao Wanshun ; Zhang Yongxin ; Zeng Yiping
刊名	半导体学报
	2004
卷号	25 期号:12 页码:1555-1560
中文摘要	the results of second-order raman-scattering experiments on n- and p-type 4h-sic are presented,covering the acoustic and the optical overtone spectral regions.some of the observed structures in the spectra are assigned to particular phonon branches and the points in the brillouin zone from which the scattering originates.there exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4h-sic,which is similar to the doublet structure with the same energy difference founded in hexagonal gan,zno, and aln.the cutoff frequency at 1926cm-1 of the second-order raman is not the overtone of the a1(lo) peak of the n-type doping 4h-sic,but that of the undoping one.the second-order raman spectrum of 4h-sic can hardly be affected by doping species or doping density.
英文摘要	the results of second-order raman-scattering experiments on n- and p-type 4h-sic are presented,covering the acoustic and the optical overtone spectral regions.some of the observed structures in the spectra are assigned to particular phonon branches and the points in the brillouin zone from which the scattering originates.there exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4h-sic,which is similar to the doublet structure with the same energy difference founded in hexagonal gan,zno, and aln.the cutoff frequency at 1926cm-1 of the second-order raman is not the overtone of the a1(lo) peak of the n-type doping 4h-sic,but that of the undoping one.the second-order raman spectrum of 4h-sic can hardly be affected by doping species or doping density.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:55导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:05:55z (gmt). no. of bitstreams: 1 4680.pdf: 329247 bytes, checksum: c00b7f8de086db29e83e24a7a7bd5226 (md5) previous issue date: 2004; novel semiconductor material laboratory,the chinese academy of sciences;school of physical science and technology,lanzhou university
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17327]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao Xin,Sun Guosheng,Li Jinmin,et al. Second-Order Raman Scattering from n- and p-Type 4H-SiC[J]. 半导体学报,2004,25(12):1555-1560.
APA	Gao Xin.,Sun Guosheng.,Li Jinmin.,Wang Lei.,Zhao Wanshun.,...&Zeng Yiping.(2004).Second-Order Raman Scattering from n- and p-Type 4H-SiC.半导体学报,25(12),1555-1560.
MLA	Gao Xin,et al."Second-Order Raman Scattering from n- and p-Type 4H-SiC".半导体学报 25.12(2004):1555-1560.