High power AlGaInP laser diodes with zinc-diffused window mirror structure

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	High power AlGaInP laser diodes with zinc-diffused window mirror structure
	Lianghui Chen
刊名	chinese optics letters
	2004
卷号	2 期号:11 页码:647-649
中文摘要	the technology of zinc-diffusion to improve catastrophic optical damage (cod) threshold of compressively strained gainp/algainp quantum well laser diodes has been introduced. after zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. as a result, the cod threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mw continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. the operation current is 84 ma and the slope efficiency is 0.74 w/a at 40 mw. the lasing wavelength is 656 nm.
学科主题	光电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17241]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lianghui Chen. High power AlGaInP laser diodes with zinc-diffused window mirror structure[J]. chinese optics letters,2004,2(11):647-649.
APA	Lianghui Chen.(2004).High power AlGaInP laser diodes with zinc-diffused window mirror structure.chinese optics letters,2(11),647-649.
MLA	Lianghui Chen."High power AlGaInP laser diodes with zinc-diffused window mirror structure".chinese optics letters 2.11(2004):647-649.