MBE Growth of High Electron Mobility InP Epilayers

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	MBE Growth of High Electron Mobility InP Epilayers
	Xu Bo
刊名	半导体学报
	2005
卷号	26 期号:8 页码:1485-1488
中文摘要	the molecular beam epitaxial growth of high quality epilayers on （100） inp substrate using a valve phosphorous cracker cell over a wide range of p/in bep ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, p/in bep ratio, cracker zone temperature, and growth temperature. the parameters have been optimized carefully via the results of hall measurements. for a typical sample, 77k electron mobility of 4.57 × 10^4 cm^2/（v · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.
英文摘要	the molecular beam epitaxial growth of high quality epilayers on （100） inp substrate using a valve phosphorous cracker cell over a wide range of p/in bep ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, p/in bep ratio, cracker zone temperature, and growth temperature. the parameters have been optimized carefully via the results of hall measurements. for a typical sample, 77k electron mobility of 4.57 × 10^4 cm^2/（v · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:17导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:17z (gmt). no. of bitstreams: 1 4437.pdf: 222839 bytes, checksum: b1111e009366285a19229a87535bc3fe (md5) previous issue date: 2005; 国家自然科学基金资助项目; nankai university;中科院半导体所
学科主题	半导体材料
收录类别	CSCD
资助信息	国家自然科学基金资助项目
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16929]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Bo. MBE Growth of High Electron Mobility InP Epilayers[J]. 半导体学报,2005,26(8):1485-1488.
APA	Xu Bo.(2005).MBE Growth of High Electron Mobility InP Epilayers.半导体学报,26(8),1485-1488.
MLA	Xu Bo."MBE Growth of High Electron Mobility InP Epilayers".半导体学报 26.8(2005):1485-1488.