LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si  Substrates for MEMS Applications

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	LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications
	LIU Xingfang
刊名	人工晶体学报
	2005
卷号	34 期号:6 页码:982-985
中文摘要	this paper presents the development of lpcvd growth of 3c-sic thin films grown on si mesas and thermally oxidized sio2 masks over si with an area of 150 × 100μm^2 and sio2/si substrates. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h2. 3c-sic films on these substrates were characterized by optical microscopy, x-ray diffraction （ xrd ）, x-ray photoelectron spectroscopy （ xps ）, scanning electron microscopy （sem） and room temperature hall effect measurements. it is shown that there were no voids at the interface between 3c-sic and sio2.
学科主题	半导体材料
收录类别	CSCD
资助信息	special funds for major state basic research project
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16915]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LIU Xingfang. LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications[J]. 人工晶体学报,2005,34(6):982-985.
APA	LIU Xingfang.(2005).LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications.人工晶体学报,34(6),982-985.
MLA	LIU Xingfang."LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications".人工晶体学报 34.6(2005):982-985.