High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures
	Zhu ZP(朱占平) ; Wang Xiaofeng ; Zeng Yiping ; Wang Baoqiang ; Zhu Zhanping ; Du Xiaoqing ; Li Min ; Chang Benkang
刊名	半导体学报
	2005
卷号	26 期号:9 页码:1692-1698
中文摘要	the effect of changing be doping concentration in gaas layer on the integrated photosensitivity for nega- tive-electron-affinity gaas photocathodes is investigated. two gaas samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. the former has a constant be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. negative-electron-affinity gaas photocathodes are fabricated by exciting the sample surfaces with alternating input of cs and o in the high vacuum system. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. this attributes to the improvement in the crystal quality and the increase in the surface escape probability. different stress situations are observed on gaas samples with monolayer structure and muhilayer structure, respectively.
英文摘要	the effect of changing be doping concentration in gaas layer on the integrated photosensitivity for nega- tive-electron-affinity gaas photocathodes is investigated. two gaas samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. the former has a constant be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. negative-electron-affinity gaas photocathodes are fabricated by exciting the sample surfaces with alternating input of cs and o in the high vacuum system. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. this attributes to the improvement in the crystal quality and the increase in the surface escape probability. different stress situations are observed on gaas samples with monolayer structure and muhilayer structure, respectively.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:40导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:40z (gmt). no. of bitstreams: 1 4358.pdf: 517530 bytes, checksum: 498cd4d73197b7ff7b7ea72854ff4aae (md5) previous issue date: 2005; 中国科学院半导体研究所;institute of semiconductors, chinese academy of sciences;institute of electronic engineering
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16787]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu ZP,Wang Xiaofeng,Zeng Yiping,et al. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. 半导体学报,2005,26(9):1692-1698.
APA	朱占平.,Wang Xiaofeng.,Zeng Yiping.,Wang Baoqiang.,Zhu Zhanping.,...&Chang Benkang.(2005).High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures.半导体学报,26(9),1692-1698.
MLA	朱占平,et al."High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures".半导体学报 26.9(2005):1692-1698.