Dislocation Reduction in GaN on Sapphire by Epitaxial  Lateral Overgrowth

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	Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
	Wang Hui; Zhang Shuming; Zhu Jianjun; Zhao Degang; Wang Hui
刊名	半导体学报
	2006
卷号	27 期号:3 页码:419-424
中文摘要	high quality gan is grown on gan substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. afm,wet chemical etching, and tem experiments show that with a two-step elog procedure, the propagation of defects under the mask is blocked, and the coherently grown gan above the window also experiences a drastic reduction in defect density. in addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. the extremely low density of threading dislocations within wing regions makes elog gan a potential template for the fabrication of nitride-based lasers with improved performance.
学科主题	光电子学
收录类别	CSCD
资助信息	国家高技术研究发展计划资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16683]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Hui,Zhang Shuming,Zhu Jianjun,et al. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. 半导体学报,2006,27(3):419-424.
APA	Wang Hui,Zhang Shuming,Zhu Jianjun,Zhao Degang,&Wang Hui.(2006).Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth.半导体学报,27(3),419-424.
MLA	Wang Hui,et al."Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth".半导体学报 27.3(2006):419-424.