1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot  Laser Diode Grown by Molecular Beam Epitaxy

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	1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
	Wu Donghai; Han Qin; Peng Hongling; Niu Zhichuan
刊名	半导体学报
	2006
卷号	27 期号:3 页码:482-488
中文摘要	The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
学科主题	半导体物理
收录类别	CSCD
资助信息	国家重点基础研究发展计划资助项目,国家自然科学基金,国家高技术发展研究计划
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16681]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu Donghai,Han Qin,Peng Hongling,et al. 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy[J]. 半导体学报,2006,27(3):482-488.
APA	Wu Donghai,Han Qin,Peng Hongling,&Niu Zhichuan.(2006).1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy.半导体学报,27(3),482-488.
MLA	Wu Donghai,et al."1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy".半导体学报 27.3(2006):482-488.