Temperature Distribution in Ridge Structure InGaN Laser Diodes  and Its Influence on Device Characteristics

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	Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
	Chen Lianghui; Zhao Degang; Zhu Jianjun; Zhang Shuming
刊名	半导体学报
	2006
卷号	27 期号:3 页码:499-505
中文摘要	time-dependent thermal simulation of ridge-geometry ingan laser diodes is carried out with a two-dimensional model. a high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. the temperature step is thought to have a strong influence on the characteristics of the laser diodes. time-resolved measurements of light-current curves,spectra, and the far-field pattern of the ingan laser diodes under pulsed operation are performed. the results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
学科主题	光电子学
收录类别	CSCD
资助信息	国家高技术研究发展计划资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16679]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Lianghui,Zhao Degang,Zhu Jianjun,et al. Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics[J]. 半导体学报,2006,27(3):499-505.
APA	Chen Lianghui,Zhao Degang,Zhu Jianjun,&Zhang Shuming.(2006).Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics.半导体学报,27(3),499-505.
MLA	Chen Lianghui,et al."Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics".半导体学报 27.3(2006):499-505.