Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

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	Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
	Zeng Yugang ; Han Genquan ; Yu Jinzhong
刊名	半导体学报
	2008
卷号	29 期号:4 页码:641-644
中文摘要	ge self-assembled quantum dots (saqds) are grown with a self-assembled uhv/cvd epitaxy system. then,the as-grown ge quantum dots are annealed by arf excimer laser. in the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (liqd). the diameter of the liqd is 20～25nm which is much smaller than the as-grown dot and the liqd has a higher density of about 6 × 10~(10)cm~(-2). the surface morphology evolution is investigated by afm.
英文摘要	ge self-assembled quantum dots (saqds) are grown with a self-assembled uhv/cvd epitaxy system. then,the as-grown ge quantum dots are annealed by arf excimer laser. in the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (liqd). the diameter of the liqd is 20～25nm which is much smaller than the as-grown dot and the liqd has a higher density of about 6 × 10~(10)cm~(-2). the surface morphology evolution is investigated by afm.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:05导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:05z (gmt). no. of bitstreams: 1 3929.pdf: 501157 bytes, checksum: 2fd320a37988f466111b5efcfe252df2 (md5) previous issue date: 2008; 国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:g2 366 5)资助项目; institute of semiconductors,chinese academy of sciences
学科主题	光电子学
收录类别	CSCD
资助信息	国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:g2 366 5)资助项目
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16109]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zeng Yugang,Han Genquan,Yu Jinzhong. Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing[J]. 半导体学报,2008,29(4):641-644.
APA	Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing.半导体学报,29(4),641-644.
MLA	Zeng Yugang,et al."Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing".半导体学报 29.4(2008):641-644.