Dislocation movement in nitrogen-doped Czochralski silicon

	Dislocation movement in nitrogen-doped Czochralski silicon
	Wei YD ; Liang JW
刊名	chinese physics letters
	1996
卷号	13 期号:5 页码:382-385
关键词	VELOCITIES
ISSN号	0256-307x
通讯作者	wei yd shanxi univ dept phys taiyuan 030006 peoples r china.
中文摘要	dislocation movement in n-doped czochralski silicon (cz-si) was surveyed by four point bend method. dislocation movement velocities in cz-si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. the order of measured dislocation movement velocities, at 700 degrees c less than or equal to t less than or equal to 800 degrees c and under resolved stress sigma=4.1 kg/mm(2), was v-sb.o > v-n.sb.o>v-n.o. the experiments showed that nigtrogen doping could retard the movement of dislocations.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15411]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei YD,Liang JW. Dislocation movement in nitrogen-doped Czochralski silicon[J]. chinese physics letters,1996,13(5):382-385.
APA	Wei YD,&Liang JW.(1996).Dislocation movement in nitrogen-doped Czochralski silicon.chinese physics letters,13(5),382-385.
MLA	Wei YD,et al."Dislocation movement in nitrogen-doped Czochralski silicon".chinese physics letters 13.5(1996):382-385.