High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect
	Li B ; Xiang XB ; You ZP ; Xu Y ; Fei XY ; Liao XB
刊名	solar energy materials and solar cells
	1996
卷号	44 期号:1 页码:63-67
关键词	GaAs solar cell liquid phase epitaxy irradiation annealing GAAS
ISSN号	0927-0248
中文摘要	high efficiency alxga1-xas/gaas heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (lpe) technique, which enables simultaneous growth of twenty 2.3 x 2.3cm(2) epilayers in one run. a total area conversion efficiency of 17.33% is exhibited (1sun, am0, 2.0 x 2.0cm(2)). the shallow junction cell shows more resistance to 1 mev electron radiation than the deep one. after isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15349]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li B,Xiang XB,You ZP,et al. High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect[J]. solar energy materials and solar cells,1996,44(1):63-67.
APA	Li B,Xiang XB,You ZP,Xu Y,Fei XY,&Liao XB.(1996).High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect.solar energy materials and solar cells,44(1),63-67.
MLA	Li B,et al."High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect".solar energy materials and solar cells 44.1(1996):63-67.