X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

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	X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis
	Wu MF ; Vantomme A ; Pattyn H ; Langouche G ; Yang QQ ; Wang QM
刊名	journal of applied physics
	1996
卷号	80 期号:10 页码:5713-5717
关键词	EPITAXIAL ERBIUM SILICIDE RARE-EARTH SILICIDES DIFFUSION MARKER EXPERIMENTS THIN-FILMS 111 SI ELECTRICAL-PROPERTIES ATOMIC-STRUCTURE IMPLANTED SI YTTRIUM GROWTH
ISSN号	0021-8979
通讯作者	wu mf beijing univdept tech physbeijing 100871peoples r china.
中文摘要	ersi1.7 layers with high crystalline quality (chi(min) of er is 1.5%) have been formed by 90 kev er ion implantation to a dose of 1.6x10(17)/cm(2) at 450 degrees c using channeled implantation. the perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. the deduced tetragonal distortion e(t(xrd))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(t(rbs))2.14+/-0.17% deduced from the rutherford backscattering and channeling measurements. the quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15337]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu MF,Vantomme A,Pattyn H,et al. X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis[J]. journal of applied physics,1996,80(10):5713-5717.
APA	Wu MF,Vantomme A,Pattyn H,Langouche G,Yang QQ,&Wang QM.(1996).X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis.journal of applied physics,80(10),5713-5717.
MLA	Wu MF,et al."X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis".journal of applied physics 80.10(1996):5713-5717.