Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

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	Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors
	Li Z ; Li CJ ; Verbitskaya E ; Eremin V
刊名	nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment
	1997
卷号	385 期号:2 页码:321-329
关键词	CHARGES N-EFF RADIATION-DAMAGE SPECTROSCOPY
ISSN号	0168-9002
通讯作者	li z brookhaven natl labuptonny 11973.
中文摘要	neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (eta). it has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with eta. laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after eta. current deep level transient spectroscopy (i-dlts) and thermally stimulated current (tsc) data show that the dominant effect is the increase of a level at 0.39 ev below the conduction band (e(c) - 0.39 ev) or a level above the valence band (e(v) + 0.39 ev). candidates tentatively identified for this level are the singly charged double vacancy (v-v-) level at e(c) - 0.39 ev, the carbon interstitial-oxygen interstitial (c-i-o-i) level at e(v) + 0.36 ev, and/or the tri-vacancy-oxygen center (v3o) at e(v) + 0.40 ev.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15283]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Z,Li CJ,Verbitskaya E,et al. Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors[J]. nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,1997,385(2):321-329.
APA	Li Z,Li CJ,Verbitskaya E,&Eremin V.(1997).Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors.nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,385(2),321-329.
MLA	Li Z,et al."Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors".nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment 385.2(1997):321-329.