Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice

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	Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
	Pan D ; Zeng YP ; Li JM ; Zhang CH ; Kong MY ; Wang HM ; Wang CY ; Wu J
刊名	journal of crystal growth
	1997
卷号	175 期号:0 页码:760-764
关键词	quantum dot intersubband absorption quantum dot infrared photodetector WELL INFRARED PHOTODETECTORS PHONON-SCATTERING LUMINESCENCE GAAS(100)
ISSN号	0022-0248
通讯作者	pan d chinese acad sciinst semicondmat ctrpob 912beijing 100083peoples r china.
中文摘要	we have grown a high-quality 20 period ingaas/gaas quantum dot superlattice with a standard structure typically used for quantum well infrared photodetector. normal incident absorption was observed around 13-15 mu m. potential applications for this work include high-performance quantum dot infrared detectors.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15147]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan D,Zeng YP,Li JM,et al. Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice[J]. journal of crystal growth,1997,175(0):760-764.
APA	Pan D.,Zeng YP.,Li JM.,Zhang CH.,Kong MY.,...&Wu J.(1997).Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice.journal of crystal growth,175(0),760-764.
MLA	Pan D,et al."Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice".journal of crystal growth 175.0(1997):760-764.