Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD
	Zhao YW ; Li ZM ; He SQ ; Liao XB ; Sheng SR ; Deng LS ; Ma ZX
刊名	solar energy materials and solar cells
	1997
卷号	48 期号:0 页码:321-326
关键词	polycrystalline silicon thin films solar cells rapid thermal CVD
ISSN号	0927-0248
通讯作者	zhao yw beijing solar energy res instbeijing 100083peoples r china.
中文摘要	polycrystalline silicon (poly-si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (rtcvd) technique, with a growth rate up to 100 angstrom/s at the substrate temperature (t-s) of 1030 degrees c. the average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. by using the poly-si films, the first model pn(+) junction solar cell without anti-reflecting (ar) coating has been prepared on an unpolished heavily phosphorus-doped si wafer, with an energy conversion efficiency of 4.54% (am 1.5, 100 mw/cm(2), 1 cm(2)).
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15125]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao YW,Li ZM,He SQ,et al. Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD[J]. solar energy materials and solar cells,1997,48(0):321-326.
APA	Zhao YW.,Li ZM.,He SQ.,Liao XB.,Sheng SR.,...&Ma ZX.(1997).Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD.solar energy materials and solar cells,48(0),321-326.
MLA	Zhao YW,et al."Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD".solar energy materials and solar cells 48.0(1997):321-326.