DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS

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	DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS
	ZHONG XF
刊名	physical review b
	1991
卷号	44 期号:24 页码:13435-13445
关键词	GALLIUM-ARSENIDE LOCAL MODE SPECTROSCOPY
ISSN号	1098-0121
中文摘要	the basic idea of a defect model of photoconversion by an oxygen impurity in semi-insulating gaas, proposed in an earlier paper, is described in a systematic way. all experiments related to this defect, including high-resolution spectroscopic measurements, piezospectroscopic study, and recent measurements on electronic energy levels, are explained on the basis of this defect model. the predictions of the model are in good agreement with the experiments. a special negative-u mechanism in this defect is discussed in detail with an emphasis on the stability of the charge states. the theoretical basis of using a self-consistent bond-orbital model in the calculation is also given.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14231]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	ZHONG XF. DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS[J]. physical review b,1991,44(24):13435-13445.
APA	ZHONG XF.(1991).DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS.physical review b,44(24),13435-13445.
MLA	ZHONG XF."DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS".physical review b 44.24(1991):13435-13445.