ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

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	ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON
	MARKLUND S ; WANG YL
刊名	solid state communications
	1992
卷号	82 期号:2 页码:137-140
关键词	CORE STRUCTURE STATES MODEL
ISSN号	0038-1098
通讯作者	marklund s lulea univ technoldiv physs-95187 luleasweden
中文摘要	an lcao scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in si. the results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. we find two bands separate from each other in the entire brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14203]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	MARKLUND S,WANG YL. ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON[J]. solid state communications,1992,82(2):137-140.
APA	MARKLUND S,&WANG YL.(1992).ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON.solid state communications,82(2),137-140.
MLA	MARKLUND S,et al."ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON".solid state communications 82.2(1992):137-140.