OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS

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	OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS
	ZHU QS ; HIRAMATSU K ; SAWAKI N ; AKASAKI I
刊名	physica status solidi b-basic research
	1992
卷号	172 期号:2 页码:647-653
关键词	100 GAAS SEMICONDUCTORS INGAP
ISSN号	0370-1972
通讯作者	zhu qs acad sinicainst semicondpob 912beijing 100083peoples r china
中文摘要	the measurement of dlts on the alloy inxga1-xasyp1-y (0 less-than-or-equal-to y less-than-or-equal-to 0.3; 0.5 greater-than-or-equal-to x greater-than-or-equal-to 0.35) shows a new signal, labeled as e2, with an activation energy of e(c) - 0.61 ev and the sims signals show a large number of oxygen. to clarify is further, the energy of the deep level e2 is quantitatively calculated by using vogl's tight-binding theory and hjalmarson's deep level theory. as a result, the deep a1-symmetric level associated with an oxygen on the anion site of inxga1-xasyp1-y locates deeply in the band gap. thus, the level e2 is considered to be induced by the oxygen impurity.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14179]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	ZHU QS,HIRAMATSU K,SAWAKI N,et al. OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS[J]. physica status solidi b-basic research,1992,172(2):647-653.
APA	ZHU QS,HIRAMATSU K,SAWAKI N,&AKASAKI I.(1992).OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS.physica status solidi b-basic research,172(2),647-653.
MLA	ZHU QS,et al."OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS".physica status solidi b-basic research 172.2(1992):647-653.