HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE
	ZHONG L ; WANG ZG ; WAN S ; ZHU JB ; SHIMURA F
刊名	applied physics a-materials science & processing
	1992
卷号	55 期号:4 页码:313-316
关键词	BANDS
ISSN号	0947-8396
通讯作者	zhong l n carolina state univdept mat sci & engnraleighnc 27695
中文摘要	neutron transmutation doped (ntd) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 k). an effective-mass-like donor state hd0/+ has been found at 110.8 me v below the conduction band bottom after rapid thermal annealing (rta). the hd0/+ formation mechanism after ntd and rta is briefly discussed, and tentatively attributed to h atoms present in the vicinity of some residual irradiation defects, like a complex of a h atom and a h-saturated vacancy.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14169]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	ZHONG L,WANG ZG,WAN S,et al. HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE[J]. applied physics a-materials science & processing,1992,55(4):313-316.
APA	ZHONG L,WANG ZG,WAN S,ZHU JB,&SHIMURA F.(1992).HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE.applied physics a-materials science & processing,55(4),313-316.
MLA	ZHONG L,et al."HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE".applied physics a-materials science & processing 55.4(1992):313-316.