CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS

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	CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS
	WANG XH ; ZHENG HZ ; YU T ; LAIHO R
刊名	applied surface science
	1994
卷号	75 期号:0 页码:269-273
关键词	DIMENSIONAL ELECTRON-GAS SCATTERING HETEROSTRUCTURES TRANSPORT
ISSN号	0169-4332
通讯作者	wang xh chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china
中文摘要	the influence of heterostructure quality on transport and optical properties of gaas/algaas single quantum wells with different qualities was studied. in a conventional sample-a, the transport scattering time and the quantum scattering time are small and close to each other. the interface roughness scattering is a dominant scattering mechanism. from comparison between theory and experiment, interface roughness with fluctuation height 2.5 angstrom and the lateral size of 50-70 angstrom were estimated. for samples introducing superlattices instead of algaas layers or by utilizing growth interruption, both the transport and pl measurements showed that interfaces were rather smooth in the samples. the two scattering times are much longer. the interface roughness scattering is relegated to an unimportant position. results demonstrated that it is important to control the formation of heterostructures in order to improve the interface quality.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14019]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WANG XH,ZHENG HZ,YU T,et al. CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS[J]. applied surface science,1994,75(0):269-273.
APA	WANG XH,ZHENG HZ,YU T,&LAIHO R.(1994).CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS.applied surface science,75(0),269-273.
MLA	WANG XH,et al."CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS".applied surface science 75.0(1994):269-273.