RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

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	RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING
	XU TB ; ZHU PR ; LI DQ ; REN TQ ; SUN HL ; WAN SK
刊名	physics letters a
	1994
卷号	189 期号:5 页码:423-427
关键词	LONGITUDINAL MODE-OPERATION RUTHERFORD BACKSCATTERING ERBIUM ELECTROLUMINESCENCE LASERS
ISSN号	0375-9601
通讯作者	xu tb chinese acad sciinst physbeijing 100080peoples r china
中文摘要	the rapid thermal annealing temperature dependence of the recrystallization, yb migration and its optical activation were studied for yb-implanted silicon. for the annealing regime 800-1000-degrees-c, the yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. however, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-c.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13995]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	XU TB,ZHU PR,LI DQ,et al. RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING[J]. physics letters a,1994,189(5):423-427.
APA	XU TB,ZHU PR,LI DQ,REN TQ,SUN HL,&WAN SK.(1994).RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING.physics letters a,189(5),423-427.
MLA	XU TB,et al."RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING".physics letters a 189.5(1994):423-427.