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	The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
	Hu XL (Hu Xiao-Long) ; Zhang JY (Zhang Jiang-Yong) ; Shang JZ (Shang Jing-Zhi) ; Liu WJ (Liu Wen-Jie) ; Zhang BP (Zhang Bao-Ping)
刊名	chinese physics b
	2010
卷号	19期号:11页码:art. no. 117801
关键词	exciton-longitudinal-optical-phonon InGaN/GaN single quantum well GaN cap layer Huang-Rhys factor
通讯作者	zhang, bp, xiamen univ, dept phys, lab micronano optoelect, xiamen 361005, peoples r china.
合作状况	国际
英文摘要	this paper studies the exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses by low temperature photoluminescence (pl) measurements with increasing cap layer thickness, the pl peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (lo) phonon, described by huang-rhys factor, increases remarkably due to an enhancement of the internal electric field with increasing excitation intensity, the zero-phonon peak shows a blueshift and the huang-rhys factor decreases these results reveal that there is a large built-in electric field in the well layer and the exciton-lo phonon coupling is strongly affected by the thickness of the cap layer; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:42:10z no. of bitstreams: 1 the exciton-longitudinal-optical-phonon coupling in ingan-gan single quantum wells with various cap layer thicknesses.pdf: 222669 bytes, checksum: 8f59f232ddb0590772854f3ac7f3b2c9 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:48z (gmt) no. of bitstreams: 1 the exciton-longitudinal-optical-phonon coupling in ingan-gan single quantum wells with various cap layer thicknesses.pdf: 222669 bytes, checksum: 8f59f232ddb0590772854f3ac7f3b2c9 (md5); made available in dspace on 2010-12-28t00:59:48z (gmt). no. of bitstreams: 1 the exciton-longitudinal-optical-phonon coupling in ingan-gan single quantum wells with various cap layer thicknesses.pdf: 222669 bytes, checksum: 8f59f232ddb0590772854f3ac7f3b2c9 (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant nos 60876007 and 10974165) and the research program of xiamen municipal science and technology bureau, china (grantno 2006aa03z110); 国际
学科主题	光电子学
收录类别	SCI
资助信息	project supported by the national natural science foundation of china (grant nos 60876007 and 10974165) and the research program of xiamen municipal science and technology bureau, china (grantno 2006aa03z110)
语种	英语
公开日期	2010-12-28 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20682]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Hu XL ,Zhang JY ,Shang JZ ,et al. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses[J]. chinese physics b,2010,19(11):art. no. 117801.
APA	Hu XL ,Zhang JY ,Shang JZ ,Liu WJ ,&Zhang BP .(2010).The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses.chinese physics b,19(11),art. no. 117801.
MLA	Hu XL ,et al."The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses".chinese physics b 19.11(2010):art. no. 117801.

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