Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires

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	Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires
	Wang ZG (Wang Zhiguo) ; Li JB (Li Jingbo) ; Gao F (Gao Fei) ; Weber WJ (Weber William J.)
刊名	chemphyschem
	2010
卷号	11 期号:15 页码:3329-3332
关键词	SILICON NANOWIRES CATALYTIC GROWTH BAND OFFSETS SOLAR-CELLS SEMICONDUCTORS SUPERLATTICES EFFICIENCY
通讯作者	wang, zg, univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. 电子邮箱地址: zgwang@uestc.edu.cn
合作状况	国际
英文摘要	the electronic properties of wurtzite/zinc-blende (wz/zb) heterojunction gan are investigated using first-principles methods. a small component of zb stacking formed along the growth direction in the wz gan nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the zb stacking. the later case provides an efficient way to separate the charge through controlling crystal structure. these results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t03:47:54z no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t03:59:21z (gmt) no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5); made available in dspace on 2010-12-05t03:59:21z (gmt). no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5) previous issue date: 2010; z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li was financially supported by the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar. f. goo and w j. weber were supported by the division of materials sciences and engineering, office of basic energy sciences, us department of energy under contract de-ac05-76l01830.; 国际
学科主题	半导体物理
收录类别	SCI
资助信息	z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li was financially supported by the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar. f. goo and w j. weber were supported by the division of materials sciences and engineering, office of basic energy sciences, us department of energy under contract de-ac05-76l01830.
语种	英语
公开日期	2010-12-05 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20653]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang ZG ,Li JB ,Gao F ,et al. Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires[J]. chemphyschem,2010,11(15):3329-3332.
APA	Wang ZG ,Li JB ,Gao F ,&Weber WJ .(2010).Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires.chemphyschem,11(15),3329-3332.
MLA	Wang ZG ,et al."Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires".chemphyschem 11.15(2010):3329-3332.